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| Ordering number : ENN7926 SGF35 SGF35 Features * * * * N-Channel GaAs MESFET For C to Ku-Band Local Oscillator and Amplifier Lower Phase Noise. Highly reliable protection film. Automatic surface mounting supported. MCPH4 package. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDS VGS ID PD Tj Tstg Mounted on copper foil (area : 0.96mm2) Glass epoxy board (145!80!1.6mm) Conditions Ratings 6 --5 100 400 150 --55 to +150 Unit V V mA mW C C Electrical Characteristics at Ta=25C Parameter Gate-to-Source Leakage Current Saturated Drain Current Cutoff Voltage Forward Transfer Admittance Symbol IGSO IDSS VGS(off) yfs Conditions VGS=--5V VDS=3V, VGS=0 VDS=3V, ID=100A VDS=3V, ID=10mA Ratings min 30 -0.5 typ 50 --1.6 34 max --10 70 --2.7 Unit A mA V mS Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 33004SG TS IM TA-101124 No.7926-1/5 SGF35 Package Dimensions unit : mm 1316 (Bottom view) (Side view) 0.25 0.3 0.15 3 2.1 1.6 4 0.25 1.3 2.0 0.07 2 1 (Top view) 4 (Side view) 3 1 : Gate 2 : Source 3 : Drain 4 : Source SANYO : MCPH4 S-Parameter SGF35 VDS=3V IDS=30mA FREQUENCY MHz 3000.0000 4000.0000 5000.0000 6000.0000 7000.0000 8000.0000 9000.0000 10000.0000 11000.0000 12000.0000 13000.0000 14000.0000 15000.0000 16000.0000 MAG 0.801 0.731 0.678 0.622 0.544 0.459 0.446 0.475 0.488 0.500 0.575 0.669 0.716 0.752 S11 ANG --74.0 --94.3 --110.8 --122.9 --137.6 --162.4 168.1 147.3 129.6 104.0 74.3 58.8 52.3 40.7 MAG 2.944 2.622 2.363 2.230 2.181 2.120 2.007 1.904 1.857 1.827 1.676 1.467 1.345 1.257 S21 ANG 111.4 93.6 78.4 65.2 50.8 34.6 18.3 4.1 -11.1 -29.0 -49.1 -65.7 -81.0 -99.6 MAG 0.048 0.052 0.056 0.063 0.077 0.094 0.112 0.133 0.156 0.187 0.200 0.206 0.213 0.226 S12 ANG 56.0 53.0 54.3 58.6 60.6 58.2 53.3 48.1 40.4 27.9 13.0 -0.4 -11.5 -27.8 MAG 0.675 0.659 0.646 0.636 0.630 0.627 0.614 0.587 0.543 0.550 0.573 0.546 0.507 0.516 S22 ANG --35.0 --43.3 --50.0 --56.5 --66.3 --76.9 --87.1 --96.7 --111.2 --133.8 --158.2 --178.2 159.5 126.4 SGF35 VDS=3V IDS=30mA FREQUENCY MHz 3000.0000 4000.0000 5000.0000 6000.0000 7000.0000 8000.0000 9000.0000 10000.0000 11000.0000 12000.0000 13000.0000 14000.0000 15000.0000 16000.0000 GUmax dB 16.47 14.17 12.49 11.33 10.49 9.72 9.07 8.54 8.07 8.05 7.96 7.45 6.99 6.95 14.50 13.07 12.53 12.15 GAmax dB S21^2 dB 9.38 8.37 7.47 6.96 6.77 6.52 6.05 5.59 5.37 5.23 4.49 3.33 2.58 1.99 S12^2 dB --26.35 --25.60 --25.04 --24.06 --22.29 --20.57 --19.00 --17.50 --16.13 --14.58 --13.97 --13.74 --13.42 --12.90 0.700 0.910 1.080 1.100 1.110 1.050 0.950 0.850 0.810 0.700 0.620 0.570 0.570 0.540 K Delay ns 0.054 0.045 0.040 0.031 0.041 0.044 0.047 0.037 0.044 0.057 0.057 0.033 0.046 0.055 Mason's U dB 23.536 22.112 20.756 19.970 20.335 18.841 17.935 17.025 14.524 14.643 14.090 13.143 11.181 10.481 G1 dB 4.45 3.32 2.67 2.12 1.52 1.03 0.96 1.11 1.18 1.25 1.75 2.58 3.12 3.62 G2 dB 2.64 2.47 2.34 2.25 2.19 2.17 2.06 1.84 1.52 1.57 1.73 1.54 1.29 1.35 0.85 1 2 No.7926-2/5 SGF35 S-Parameter VDS=3V IDS=30mA, START 3GHz STOP 16GHz S11 50 25 120 100 3.0GHz S21 90 60 12.0GHz 10 15.0GHz 150 200 250 150 6.0GHz 30 9.0GHz 0 10 25 50 100 150 250 9.0GHz 180 12.0GHz 0 --10 6.0GHz --250 --200 --150 15.0GHz --150 --30 --25 --50 3.0GHz --100 R max=1 IT07528 --120 --90 --60 R max=5 IT07529 S12 90 120 60 S22 50 25 100 150 30 10 200 250 150 180 9.0GHz 6.0GHz 3.0GHz 12.0GHz 0 0 15.0GHz 10 25 50 100 150 250 15.0GHz 3.0GHz --10 --150 --30 12.0GHz 9.0GHz R max=0.5 IT07530 6.0GHz --250 --200 --150 --25 --50 --120 --90 --60 --100 R max=1 IT07531 No.7926-3/5 SGF35 Oscillation Characteristics Measured by the Application JIG for SGF35 Equivalent Circuit of the Application JIG (Recommended bias condition is VD=5V, ID=31mA) VD 1000pF 10 Dielectric Resonator G Z0, B 51 D S GaAsMESFET OUTPUT 10 ATTEN 30dB RL 20.0dBm 10dB / MKR 10.00dBm 10.678GHz 0 --20 --40 [hp] 4352S : 10.678GHz VD=5V ID=37mA --57.246dBc / Hz @ 1kHz Phase noise [dBC/Hz] S MKR 10.678GHz 10.00dBm --60 --80 --100 --120 --140 --160 --180 --200 1k 2 3 5 710k 2 3 57 100k 2 3 5 71M 2 3 5 710M IT06797 K CENTER 10.765GHz RBW 10kHz VBW 10kHz SPAN 1.000MHz SWP 50ms IT06796 [f] [dBc / Hz] VS f [Hz] No.7926-4/5 SGF35 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS No.7926-5/5 |
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